{"title":"高性能金属/绝缘体/金属电容器采用HfTiO作为电介质","authors":"H. Hsu, Chun‐Hu Cheng, B. Tsui","doi":"10.1109/VTSA.2009.5159294","DOIUrl":null,"url":null,"abstract":"Hafnium titanate (HfTiO) film was adapted as the insulator of MIM capacitors for RF/Analog ICs applications. Low leakage current of 3.4×10<sup>−8</sup> A/cm<sup>2</sup> at −1V and high capacitance density of 17.5fF/µm<sup>2</sup> were obtained. A N<inf>2</inf>-plasma treatment on HfTiO films can further reduce leakage current by two orders of magnitude and no apparent degradation is observed on the capacitance density and voltage coefficient of capacitance (VCC) properties. Capacitance density of 5.1fF/µm<sup>2</sup>, leakage current of 1.3×10<sup>−9</sup>A/cm<sup>2</sup>, and parabolic VCC value of 40ppm/V<sup>2</sup> can be achieved by 51nm thick HfTiO film. These results meet the RF/analog requirements in 2012 predicted by ITRS.","PeriodicalId":309622,"journal":{"name":"2009 International Symposium on VLSI Technology, Systems, and Applications","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"High performance metal/insulator/metal capacitors using HfTiO as dielectric\",\"authors\":\"H. Hsu, Chun‐Hu Cheng, B. Tsui\",\"doi\":\"10.1109/VTSA.2009.5159294\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Hafnium titanate (HfTiO) film was adapted as the insulator of MIM capacitors for RF/Analog ICs applications. Low leakage current of 3.4×10<sup>−8</sup> A/cm<sup>2</sup> at −1V and high capacitance density of 17.5fF/µm<sup>2</sup> were obtained. A N<inf>2</inf>-plasma treatment on HfTiO films can further reduce leakage current by two orders of magnitude and no apparent degradation is observed on the capacitance density and voltage coefficient of capacitance (VCC) properties. Capacitance density of 5.1fF/µm<sup>2</sup>, leakage current of 1.3×10<sup>−9</sup>A/cm<sup>2</sup>, and parabolic VCC value of 40ppm/V<sup>2</sup> can be achieved by 51nm thick HfTiO film. These results meet the RF/analog requirements in 2012 predicted by ITRS.\",\"PeriodicalId\":309622,\"journal\":{\"name\":\"2009 International Symposium on VLSI Technology, Systems, and Applications\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-04-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 International Symposium on VLSI Technology, Systems, and Applications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VTSA.2009.5159294\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 International Symposium on VLSI Technology, Systems, and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VTSA.2009.5159294","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High performance metal/insulator/metal capacitors using HfTiO as dielectric
Hafnium titanate (HfTiO) film was adapted as the insulator of MIM capacitors for RF/Analog ICs applications. Low leakage current of 3.4×10−8 A/cm2 at −1V and high capacitance density of 17.5fF/µm2 were obtained. A N2-plasma treatment on HfTiO films can further reduce leakage current by two orders of magnitude and no apparent degradation is observed on the capacitance density and voltage coefficient of capacitance (VCC) properties. Capacitance density of 5.1fF/µm2, leakage current of 1.3×10−9A/cm2, and parabolic VCC value of 40ppm/V2 can be achieved by 51nm thick HfTiO film. These results meet the RF/analog requirements in 2012 predicted by ITRS.
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