薄膜SOI和栅极全积累模式p- mosfet中热载子效应的比较

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI:10.1109/SOI.1993.344553

D. Flandre, P. Francis, J. Colinge, S. Cristoloveanu

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引用次数: 2

摘要

在AM p- mosfet的情况下，对称栅极(GAA) SOI结构比常规SOI结构的优势在几个方面得到了证明:抑制锁存现象，抑制过高的热电子门电流(实验和理论上与锁存相关)，以及由于缺乏锁存和脆弱的埋藏氧化物而更好地抵抗热电子降解。

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Comparison of hot-carrier effects in thin-film SOI and gate-all-around accumulation-mode p-MOSFETs

The advantage of symmetrical gate (GAA) SOI structures over regular SOI in the case of AM p-MOSFETs was demonstrated in several respects: suppression of a latch phenomenon, suppression of excessively high hot-electron gate currents which have been experimentally and theoretically correlated with the latch, and better resistance to hot-electron degradation due to the absence of the latch and of the vulnerable buried oxide.<>

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Proceedings of 1993 IEEE International SOI Conference

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