双栅FinFET:器件及其对IC设计自动化的影响

2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866) Pub Date : 2004-05-17 DOI:10.1109/ICICDT.2004.1309928

I. Aller, J. Clabes

{"title":"双栅FinFET:器件及其对IC设计自动化的影响","authors":"I. Aller, J. Clabes","doi":"10.1109/ICICDT.2004.1309928","DOIUrl":null,"url":null,"abstract":"This paper first gives an overview of double-gate structures in general. briefly covers the FinFET technology.. and then describes how the unique characteristics of this fully depleted MOSFET device impact integrated circuit design.","PeriodicalId":158994,"journal":{"name":"2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The double-gate FinFET: device and impact on IC design automation\",\"authors\":\"I. Aller, J. Clabes\",\"doi\":\"10.1109/ICICDT.2004.1309928\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper first gives an overview of double-gate structures in general. briefly covers the FinFET technology.. and then describes how the unique characteristics of this fully depleted MOSFET device impact integrated circuit design.\",\"PeriodicalId\":158994,\"journal\":{\"name\":\"2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-05-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICICDT.2004.1309928\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICICDT.2004.1309928","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文首先对双栅结构进行了概述。简要介绍了FinFET技术。然后描述了这种完全耗尽的MOSFET器件的独特特性如何影响集成电路设计。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

The double-gate FinFET: device and impact on IC design automation

This paper first gives an overview of double-gate structures in general. briefly covers the FinFET technology.. and then describes how the unique characteristics of this fully depleted MOSFET device impact integrated circuit design.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)

自引率

0.00%

发文量