Chung-Hsun Lin, Josephine B. Chang, M. Guillorn, A. Bryant, P. Oldiges, W. Haensch
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Non-planar device architecture for 15nm node: FinFET or trigate?
We have evaluated FinFET and Trigate performance under 15nm node ground rules. Trigate needs to maintain a high aspect ratio in order to achieve a comparable electrostatic performance of FinFET at tight FP, which makes it a fin-geometry instead of channel doping-controlled device. Trigate has less Cgs penalty compared to FinFET due to the additional current conduction at the top surface. The advantage of less parasitic capacitance will be reduced by other effects, such as parasitic resistance.
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