LDMOST技术的偏温不稳定性研究

2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2018-07-01 DOI:10.1109/IPFA.2018.8452182

G. Tao, R. Koster, A. Romanescu, S. Theeuwen, R. van Dalen, H. Bosch, Tsung-Miau Wang, Shih-Yuan Chen, Y. Jhuang, Yung-Wen Cheng

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引用次数: 1

摘要

对于CMOS技术中的NBTI/PBTI进行了大量的研究，其中栅极堆栈是最重要的。在本文中，我们报告了NBTI/PBTI在射频功率应用的LDMOST技术中的研究。观察到的BTI效应与流程的后端相关联。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Study of Biased Temperature Instabilities in LDMOST technologies

Lots of studies have been dedicated to NBTI/PBTI in CMOS technologies, where the gate stack is most important. In this paper, we report our study of NBTI/PBTI in LDMOST technologies for RF Power applications. The observed BTI effect is associated to the backend of the processes.

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2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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