测试结构，以评估高精度金属条纹电容器阵列周围的规则虚拟装置的有用程度

2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS) Pub Date : 2019-03-01 DOI:10.1109/ICMTS.2019.8730988

H. Tuinhout, I. Brunets, A. Z. Duijnhoven

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引用次数: 0

摘要

本文讨论了金属条纹电容器匹配测试结构，以表征电容器阵列边缘层密度扰动的影响。结果表明，在距离阵列边缘超过5 μm的范围内，看似很小的图案密度扰动会显著影响电容阵列的系统失配。

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Test structure to assess the useful extent of regular dummy devices around high-precision metal fringe capacitor arrays

This paper discusses metal fringe capacitor matching test structures to characterize the impact of layer density disturbances at the edges of capacitor arrays. It is demonstrated that a seemingly minor pattern density disturbance can significantly affect the systematic mismatch in capacitor arrays up to well over 5 μm away from the array edges.

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2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS)

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