高能质子对碳化硅结势垒肖特基二极管的辐射效应

2020 IEEE 5th International Conference on Integrated Circuits and Microsystems (ICICM) Pub Date : 2020-10-23 DOI:10.1109/ICICM50929.2020.9292288

Shu-rui Cao, Qingkui Yu, He Wang, Yi Sun, He Lv, B. Mei, Morigen, Pengwei Li, Hongwei Zhang, M. Tang

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引用次数: 2

摘要

将碳化硅(SiC)结势垒肖特基二极管(JBS二极管)暴露在50MeV和90MeV的质子中，其影响高达5\乘以10^{10}\text{cm}^{-2}$。辐照过程中，反漏电流随辐照通量的累积而减小，未发生SEB。通过对比辐照前后的电特性，分析泄漏电流的减小与势垒高度的增加和载流子浓度的降低有关。认为不发生SEB与较低的质子通量和偏置电压有关。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Radiation Effects on Silicon Carbide Junction Barrier Schottky Diodes Caused by High Energy Proton

Silicon Carbide (SiC) Junction Barrier Schottky Diodes (JBS Diodes) were exposed to 50MeV and 90MeV protons up to a fluence of $5\times 10^{10}\text{cm}^{-2}$. During irradiation, the reverse leakage current decreased with the accumulation of fluence and no SEB occurred. By comparing the electrical characteristics before and after irradiation, it was analyzed that leakage current decreasing was related to the increase of barrier height and the reduction of carrier concentration. It was considered that no SEB occurring was associated with the lower proton fluence and biased voltage.

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来源期刊

2020 IEEE 5th International Conference on Integrated Circuits and Microsystems (ICICM)

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