电子束负电荷模式检测PMOS漏电的机理及应用

2007 IEEE International Interconnect Technology Conferencee Pub Date : 2007-06-04 DOI:10.1109/IITC.2007.382362

Li-Lung Lai, Keren Xu, D. Deng, J. Ning, Hong Xiao, Yan Zhao, E. Ma, J. Jau

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引用次数: 9

摘要

本研究通过改进钨化学机械抛光(WCMP)的表面条件来解决混合模式问题，实现并优化了负模电子束检测(EBI)。我们检测了PMOS触点处静态随机存取存储器(SRAM)阵列的暗电压对比(DVC)缺陷。物理失效分析(PFA)结果证实了预测结果，即它们是由硅化镍(NiSix)尖峰引起的P+/ n井结泄漏。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Mechanism and Application of Negative Charging Mode of Electron Beam Inspection for PMOS Leakage Detection

In this study, we modified surface condition of tungsten chemical mechanical polish (WCMP) to resolve the mix mode issue and achieved and optimized negative mode electron beam inspection (EBI). We detected dark voltage contrast (DVC) defects on static random access memory (SRAM) array at PMOS contacts. Physical failure analysis (PFA) results confirmed prediction that they are P+/N-well junction leakages caused by nickel silicide (NiSix) spiking.

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2007 IEEE International Interconnect Technology Conferencee

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