一个0.35微米CMOS开关电感双带LC-tank分频器

2008 IEEE International Symposium on VLSI Design, Automation and Test (VLSI-DAT) Pub Date : 2008-04-23 DOI:10.1109/VDAT.2008.4542457

S. Jang, Che Yi Lin, Chien-Feng Lee

{"title":"一个0.35微米CMOS开关电感双带LC-tank分频器","authors":"S. Jang, Che Yi Lin, Chien-Feng Lee","doi":"10.1109/VDAT.2008.4542457","DOIUrl":null,"url":null,"abstract":"This paper presents a switched-inductor dual-band injection locked frequency divider (ILFD) fabricated in a 0.35-um CMOS process. The circuit is made of a differential double cross-coupled CMOS LC oscillator with a switched-inductor LC-tank, which consists of a parallel LC tank in parallel with one switched inductor composite. The dual-band function is obtained by switching the MOS switch in the inductor composite. At the supply voltage of 2.4 V, the measured free-running frequencies of the divide-by-two dual band ILFD are from 2.52 GHz to 2.61 GHz for the low-frequency band and from 4.18 GHz to 4.39 GHz for the high-frequency band. At the incident power of 0 dBm. the locking ranges of low-frequency and high-frequency band are respectively from 4.0 GHz to 5.8 GHz and from 7.1 GHz to 9.3 GHz.","PeriodicalId":156790,"journal":{"name":"2008 IEEE International Symposium on VLSI Design, Automation and Test (VLSI-DAT)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"A 0.35-um CMOS switched-inductor dual-band LC-tank frequency divider\",\"authors\":\"S. Jang, Che Yi Lin, Chien-Feng Lee\",\"doi\":\"10.1109/VDAT.2008.4542457\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a switched-inductor dual-band injection locked frequency divider (ILFD) fabricated in a 0.35-um CMOS process. The circuit is made of a differential double cross-coupled CMOS LC oscillator with a switched-inductor LC-tank, which consists of a parallel LC tank in parallel with one switched inductor composite. The dual-band function is obtained by switching the MOS switch in the inductor composite. At the supply voltage of 2.4 V, the measured free-running frequencies of the divide-by-two dual band ILFD are from 2.52 GHz to 2.61 GHz for the low-frequency band and from 4.18 GHz to 4.39 GHz for the high-frequency band. At the incident power of 0 dBm. the locking ranges of low-frequency and high-frequency band are respectively from 4.0 GHz to 5.8 GHz and from 7.1 GHz to 9.3 GHz.\",\"PeriodicalId\":156790,\"journal\":{\"name\":\"2008 IEEE International Symposium on VLSI Design, Automation and Test (VLSI-DAT)\",\"volume\":\"47 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-04-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE International Symposium on VLSI Design, Automation and Test (VLSI-DAT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VDAT.2008.4542457\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE International Symposium on VLSI Design, Automation and Test (VLSI-DAT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VDAT.2008.4542457","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 8

摘要

本文提出了一种开关电感双带注入锁定分频器(ILFD)，该分频器采用0.35 μ m CMOS工艺制造。该电路由差分双交叉耦合CMOS LC振荡器和开关电感LC槽组成，该开关电感LC槽由一个并联的LC槽与一个开关电感并联组成。双频功能是通过开关电感复合中的MOS开关来实现的。在电源电压为2.4 V时，测量到的分二双频ILFD的低频自由工作频率为2.52 GHz ~ 2.61 GHz，高频自由工作频率为4.18 GHz ~ 4.39 GHz。在入射功率为0 dBm时。低频锁定范围为4.0 GHz ~ 5.8 GHz，高频锁定范围为7.1 GHz ~ 9.3 GHz。

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A 0.35-um CMOS switched-inductor dual-band LC-tank frequency divider

This paper presents a switched-inductor dual-band injection locked frequency divider (ILFD) fabricated in a 0.35-um CMOS process. The circuit is made of a differential double cross-coupled CMOS LC oscillator with a switched-inductor LC-tank, which consists of a parallel LC tank in parallel with one switched inductor composite. The dual-band function is obtained by switching the MOS switch in the inductor composite. At the supply voltage of 2.4 V, the measured free-running frequencies of the divide-by-two dual band ILFD are from 2.52 GHz to 2.61 GHz for the low-frequency band and from 4.18 GHz to 4.39 GHz for the high-frequency band. At the incident power of 0 dBm. the locking ranges of low-frequency and high-frequency band are respectively from 4.0 GHz to 5.8 GHz and from 7.1 GHz to 9.3 GHz.

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来源期刊

2008 IEEE International Symposium on VLSI Design, Automation and Test (VLSI-DAT)

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