自适应高压应力方法在FinFET技术上实现汽车质量

S. Traynor, Chen He, Y. Y. Yu, Ken Klein
{"title":"自适应高压应力方法在FinFET技术上实现汽车质量","authors":"S. Traynor, Chen He, Y. Y. Yu, Ken Klein","doi":"10.1109/ITC50571.2021.00039","DOIUrl":null,"url":null,"abstract":"High Voltage Stress Test (HVST) is critical for screening out latent defects to ensure quality on automotive semiconductor devices. This paper describes a novel way to adaptively adjust HVST stress voltage based on real-time current measurement to ensure every part is stressed reliably at the highest possible voltage within the tester hardware current limit as well as with equivalent extrinsic defect coverage on FinFET technologies.","PeriodicalId":147006,"journal":{"name":"2021 IEEE International Test Conference (ITC)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Adaptive High Voltage Stress Methodology to Enable Automotive Quality on FinFET Technologies\",\"authors\":\"S. Traynor, Chen He, Y. Y. Yu, Ken Klein\",\"doi\":\"10.1109/ITC50571.2021.00039\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High Voltage Stress Test (HVST) is critical for screening out latent defects to ensure quality on automotive semiconductor devices. This paper describes a novel way to adaptively adjust HVST stress voltage based on real-time current measurement to ensure every part is stressed reliably at the highest possible voltage within the tester hardware current limit as well as with equivalent extrinsic defect coverage on FinFET technologies.\",\"PeriodicalId\":147006,\"journal\":{\"name\":\"2021 IEEE International Test Conference (ITC)\",\"volume\":\"65 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE International Test Conference (ITC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ITC50571.2021.00039\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE International Test Conference (ITC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ITC50571.2021.00039","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

高压应力测试(HVST)是筛选潜在缺陷以确保汽车半导体器件质量的关键。本文介绍了一种基于实时电流测量的自适应调整高压电压的新方法,以确保在测试器硬件电流限制范围内,每个部件在尽可能高的电压下可靠地承受应力,并具有等效的外部缺陷覆盖。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Adaptive High Voltage Stress Methodology to Enable Automotive Quality on FinFET Technologies
High Voltage Stress Test (HVST) is critical for screening out latent defects to ensure quality on automotive semiconductor devices. This paper describes a novel way to adaptively adjust HVST stress voltage based on real-time current measurement to ensure every part is stressed reliably at the highest possible voltage within the tester hardware current limit as well as with equivalent extrinsic defect coverage on FinFET technologies.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信