采用W2W直接键合和TSV的CMOS图像传感器三维集成技术

2015 IEEE 17th Electronics Packaging and Technology Conference (EPTC) Pub Date : 2015-12-01 DOI:10.1109/EPTC.2015.7412378

N. Pham, N. Tutunjyan, Danny Volkaerts, Lan Peng, Geraldine Jamison, D. Tezcan

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引用次数: 3

摘要

本文提出了一种基于晶圆级永久氧化键合和TSV工艺的成像仪三维集成技术。该工艺允许两个芯片的堆叠和电气连接，照明成像仪芯片在读出和图像处理芯片的顶部，通过通过最后一种风格的TSV。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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3D integration technology using W2W direct bonding and TSV for CMOS based image sensors

This paper presents a 3D integration technology for imager application using wafer level permanent oxide to oxide bonding and TSV process for backside illuminated (BSI) CMOS image sensor (CIS). The process allows the stacking and electrical connection of two chips-illuminated imager chip on top of a readout and image processing chip by mean of a via last style TSV.

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来源期刊

2015 IEEE 17th Electronics Packaging and Technology Conference (EPTC)

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