利用CMOS工艺制备平面角旋转器

Hung-lin Chen, Chienliu Chang, Kaihsiang Yen, Huiwen Huang, Jinhung Chio, C. Wu, P. Chang
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引用次数: 6

摘要

提出了一种采用传统CMOS工艺制作的新型平面角旋转器。遵循0.6 /spl mu/m SPTM(单多金属三金属)CMOS工艺,该器件通过简单的无掩膜蚀刻后处理完成。悬挂单元在静电驱动下绕其几何中心旋转。除了具有单个旋转元件外,2/spl倍/2和3/spl倍/3阵列元件设计具有更大的旋转角度和更小的驱动距离。提出的设计采用智能机构,包括滑块曲柄和四杆连杆,以实现同步运动。在40伏左右的驱动电压下,可以驱动CMOS平面角旋转器。与最常见的平面角微电机相比,该设计具有响应时间短、寿命长、无摩擦磨损等特点。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Fabrication of the planar angular rotator using the CMOS process
This investigation proposes a novel planar angular rotator fabricated by the conventional CMOS process. Following the 0.6 /spl mu/m SPTM (single poly triple metal) CMOS process, the device is completed by a simple post-process with maskless etching. The suspension unit rotates around its geometric center with electrostatic actuation. In addition to having a single rotatory component, 2/spl times/2 and 3/spl times/3 arrayed components are designed to have a larger rotatory angle with less actuation distance. The proposed design adopts an intelligent mechanism, including slider-crank and four-bar linkage, to permit simultaneous motion. With driving voltages of around 40 volts, the CMOS planar angular rotator could be driven. Comparing to the most common planar angular, micromotor, the design proposed herein has a shorter response time and longer life without the problems of friction and wear.
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