具有浮动p插头的高可靠反导IGBT

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) Pub Date : 2013-05-26 DOI:10.1109/ISPSD.2013.6694437

Weizhong Chen, Zehong Li, M. Ren, Jin-ping Zhang, Bo Zhang, Yong Liu, Qing Hua, Kun Mao, Zhaoji Li

{"title":"具有浮动p插头的高可靠反导IGBT","authors":"Weizhong Chen, Zehong Li, M. Ren, Jin-ping Zhang, Bo Zhang, Yong Liu, Qing Hua, Kun Mao, Zhaoji Li","doi":"10.1109/ISPSD.2013.6694437","DOIUrl":null,"url":null,"abstract":"A current distribution model is presented for the RC-IGBTs both at IGBT mode and DIODE mode. According to the analytical model, smaller cell size would be better for the distribution of the current density and full utilization of the silicon, but the snapback would be worse. Then a novel RC-IGBT with a floating P-plug is proposed and investigated by simulations. The results show that it can suppress the snapback phenomena effectively. More importantly, the silicon utilization ratio is much higher than the others RC-IGBTs and the current is uniformly distributed in the whole wafer both at IGBT mode and DIODE mode that ensured the high temperature reliability of the RC-IGBT.","PeriodicalId":175520,"journal":{"name":"2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)","volume":"78 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":"{\"title\":\"A high reliable reverse-conducting IGBT with a floating P-plug\",\"authors\":\"Weizhong Chen, Zehong Li, M. Ren, Jin-ping Zhang, Bo Zhang, Yong Liu, Qing Hua, Kun Mao, Zhaoji Li\",\"doi\":\"10.1109/ISPSD.2013.6694437\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A current distribution model is presented for the RC-IGBTs both at IGBT mode and DIODE mode. According to the analytical model, smaller cell size would be better for the distribution of the current density and full utilization of the silicon, but the snapback would be worse. Then a novel RC-IGBT with a floating P-plug is proposed and investigated by simulations. The results show that it can suppress the snapback phenomena effectively. More importantly, the silicon utilization ratio is much higher than the others RC-IGBTs and the current is uniformly distributed in the whole wafer both at IGBT mode and DIODE mode that ensured the high temperature reliability of the RC-IGBT.\",\"PeriodicalId\":175520,\"journal\":{\"name\":\"2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)\",\"volume\":\"78 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-05-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"16\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.2013.6694437\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2013.6694437","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 16

摘要

在IGBT模式和二极管模式下，给出了rc -IGBT的电流分布模型。根据分析模型，电池尺寸越小越有利于电流密度的分布和硅的充分利用，但回跳越差。然后提出了一种新型的带有浮动p塞的RC-IGBT，并进行了仿真研究。结果表明，该方法能有效抑制弹回现象。更重要的是，硅的利用率远高于其他RC-IGBT，并且无论在IGBT模式还是二极管模式下，电流都均匀分布在整个晶圆上，确保了RC-IGBT的高温可靠性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A high reliable reverse-conducting IGBT with a floating P-plug

A current distribution model is presented for the RC-IGBTs both at IGBT mode and DIODE mode. According to the analytical model, smaller cell size would be better for the distribution of the current density and full utilization of the silicon, but the snapback would be worse. Then a novel RC-IGBT with a floating P-plug is proposed and investigated by simulations. The results show that it can suppress the snapback phenomena effectively. More importantly, the silicon utilization ratio is much higher than the others RC-IGBTs and the current is uniformly distributed in the whole wafer both at IGBT mode and DIODE mode that ensured the high temperature reliability of the RC-IGBT.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)

自引率

0.00%

发文量