S. Oeuvrard, J. Lampin, G. Ducournau, L. Virot, J. Fédéli, J. Hartmann, F. Danneville, Y. Morandini, D. Gloria
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Optical high frequency test structure and test bench definition for on wafer silicon integrated noise source characterization up to 110 GHz based on Germanium-on-Silicon photodiode
A new Optical-High-Frequency test structure and dedicated test bench have been developed to characterize a Germanium-on-Silicon photodiode intended to be used as an integrated noise source, a first step to high frequency transistor noise figure on-wafer extraction. Continuous wave signals have been measured from these 1550 nm photodiodes, with RF power higher than -20 dBm at 109 GHz.
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