{"title":"超低电阻直接接触铜孔原位化学气相清洗技术","authors":"Tsuchiya, Ueno, Donnelly, Kikkawa, Hayashi, Kobayashi, Sekiguchi","doi":"10.1109/VLSIT.1997.623694","DOIUrl":null,"url":null,"abstract":"The lowest contact resistivity, 5.8-6.8~10-lQcm (0.038Wvia for 0.44ym@), was obtained with a Cu doublelevel interconnection with via plug connected without barrier metal. The double-level interconnect was fabricated by a dual damascene process using Cu-CVD. In order to achieve ultra-low resistivity, we have developed a cleaning procedure [lst: Os plasma, 2nd: Mute H F solution, 3rd: insitu hexafluoroacetylacetone (Hbfac)) vapor cleaning] after via etching. This technology reahze one order lower via resistance than conventional one.","PeriodicalId":414778,"journal":{"name":"1997 Symposium on VLSI Technology","volume":"61 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Ultra-low Resistance Diret~ Contact Cu Via technology Using In-situ Chemical Vapor Cleamng\",\"authors\":\"Tsuchiya, Ueno, Donnelly, Kikkawa, Hayashi, Kobayashi, Sekiguchi\",\"doi\":\"10.1109/VLSIT.1997.623694\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The lowest contact resistivity, 5.8-6.8~10-lQcm (0.038Wvia for 0.44ym@), was obtained with a Cu doublelevel interconnection with via plug connected without barrier metal. The double-level interconnect was fabricated by a dual damascene process using Cu-CVD. In order to achieve ultra-low resistivity, we have developed a cleaning procedure [lst: Os plasma, 2nd: Mute H F solution, 3rd: insitu hexafluoroacetylacetone (Hbfac)) vapor cleaning] after via etching. This technology reahze one order lower via resistance than conventional one.\",\"PeriodicalId\":414778,\"journal\":{\"name\":\"1997 Symposium on VLSI Technology\",\"volume\":\"61 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-06-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1997 Symposium on VLSI Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.1997.623694\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.1997.623694","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Ultra-low Resistance Diret~ Contact Cu Via technology Using In-situ Chemical Vapor Cleamng
The lowest contact resistivity, 5.8-6.8~10-lQcm (0.038Wvia for 0.44ym@), was obtained with a Cu doublelevel interconnection with via plug connected without barrier metal. The double-level interconnect was fabricated by a dual damascene process using Cu-CVD. In order to achieve ultra-low resistivity, we have developed a cleaning procedure [lst: Os plasma, 2nd: Mute H F solution, 3rd: insitu hexafluoroacetylacetone (Hbfac)) vapor cleaning] after via etching. This technology reahze one order lower via resistance than conventional one.
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