{"title":"TDDB能否继续作为超前栅介质的可靠性测试方法?","authors":"K. Cheung","doi":"10.1109/ICICDT.2004.1309979","DOIUrl":null,"url":null,"abstract":"Advanced gate dielectrics for MOSFET, be it ultra thin SiO/sub 2/ or high-k materials are destined for deep submicron technology that is moving increasingly toward 1 voltage or below operating voltage. In this paper, we show that the well-established method of reliability evaluation and lifetime projection for gate dielectric, namely time dependent dielectric breakdown (TDDB), will no long be a suitable method for reliability evaluation, for gate dielectrics in low voltage operation.","PeriodicalId":158994,"journal":{"name":"2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Can TDDB continue to serve as reliability test method for advance gate dielectric?\",\"authors\":\"K. Cheung\",\"doi\":\"10.1109/ICICDT.2004.1309979\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Advanced gate dielectrics for MOSFET, be it ultra thin SiO/sub 2/ or high-k materials are destined for deep submicron technology that is moving increasingly toward 1 voltage or below operating voltage. In this paper, we show that the well-established method of reliability evaluation and lifetime projection for gate dielectric, namely time dependent dielectric breakdown (TDDB), will no long be a suitable method for reliability evaluation, for gate dielectrics in low voltage operation.\",\"PeriodicalId\":158994,\"journal\":{\"name\":\"2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)\",\"volume\":\"56 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-10-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICICDT.2004.1309979\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICICDT.2004.1309979","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Can TDDB continue to serve as reliability test method for advance gate dielectric?
Advanced gate dielectrics for MOSFET, be it ultra thin SiO/sub 2/ or high-k materials are destined for deep submicron technology that is moving increasingly toward 1 voltage or below operating voltage. In this paper, we show that the well-established method of reliability evaluation and lifetime projection for gate dielectric, namely time dependent dielectric breakdown (TDDB), will no long be a suitable method for reliability evaluation, for gate dielectrics in low voltage operation.
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