采用III-V纳米线/硅异质结的陡坡隧道场效应晶体管

2012 Symposium on VLSI Technology (VLSIT) Pub Date : 2012-06-12 DOI:10.1109/VLSIT.2012.6242454

K. Tomioka, M. Yoshimura, T. Fukui

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引用次数: 151

摘要

在本文中，我们提出了使用III-V纳米线(NW)/Si异质结的隧道场效应晶体管(TFET)，并通过实验证明了使用具有环绕栅结构和高k介电体的InAs NW/Si异质结TFET的陡坡开关行为。在这种器件结构中，电阻的控制对于实现陡坡开关非常重要。在VDS为0.10 - 1.00 V时，TFET的最小亚阈值斜率(SS)为21 mV/dec。

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Steep-slope tunnel field-effect transistors using III–V nanowire/Si heterojunction

In this paper, we propose tunneling field-effect transistors (TFETs) using III-V nanowire (NW)/Si heterojunctions and experimentally demonstrate steep-slope switching behaviors using InAs NW/Si heterojunction TFET with surrounding-gate architecture and high-k dielectrics. Control of resistances in this device structure is important for achieving steep-slope switching. A minimum subthreshold slope (SS) of the TFET is 21 mV/dec at VDS of 0.10 - 1.00 V.

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2012 Symposium on VLSI Technology (VLSIT)

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