{"title":"一种新型的圆形接触电阻提取结构——应用于Pd/sub 2/Si/n/sup +/Si、TiN/Ti/n/sup +/Si和TiN/Ti/p/sup +/Si界面","authors":"A. Scorzoni, M. Vanzi, C. Caprile","doi":"10.1109/ICMTS.1990.67909","DOIUrl":null,"url":null,"abstract":"A structure, named the circular resistor (CR), is proposed for extracting metal-semiconductor contact resistivity. Its particular geometry allows it to fit the actual geometry of VLSI contacts. An analytical form for the contact resistance is shown as a function of the contact parameters. The Pd/sub 2/Si/n/sup +/Si, TiN/Ti/n/sup +/Si, and TiN/Ti/p/sup +/Si interfaces are investigated by means of CRs of various dimensions, and a single value of contact resistivity is extracted for each interface.<<ETX>>","PeriodicalId":196449,"journal":{"name":"International Conference on Microelectronic Test Structures","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A novel circular structure for the extraction of the contact resistivity-application to the Pd/sub 2/Si/n/sup +/Si, TiN/Ti/n/sup +/Si and TiN/Ti/p/sup +/Si interfaces\",\"authors\":\"A. Scorzoni, M. Vanzi, C. Caprile\",\"doi\":\"10.1109/ICMTS.1990.67909\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A structure, named the circular resistor (CR), is proposed for extracting metal-semiconductor contact resistivity. Its particular geometry allows it to fit the actual geometry of VLSI contacts. An analytical form for the contact resistance is shown as a function of the contact parameters. The Pd/sub 2/Si/n/sup +/Si, TiN/Ti/n/sup +/Si, and TiN/Ti/p/sup +/Si interfaces are investigated by means of CRs of various dimensions, and a single value of contact resistivity is extracted for each interface.<<ETX>>\",\"PeriodicalId\":196449,\"journal\":{\"name\":\"International Conference on Microelectronic Test Structures\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-03-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Microelectronic Test Structures\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMTS.1990.67909\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Microelectronic Test Structures","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.1990.67909","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A novel circular structure for the extraction of the contact resistivity-application to the Pd/sub 2/Si/n/sup +/Si, TiN/Ti/n/sup +/Si and TiN/Ti/p/sup +/Si interfaces
A structure, named the circular resistor (CR), is proposed for extracting metal-semiconductor contact resistivity. Its particular geometry allows it to fit the actual geometry of VLSI contacts. An analytical form for the contact resistance is shown as a function of the contact parameters. The Pd/sub 2/Si/n/sup +/Si, TiN/Ti/n/sup +/Si, and TiN/Ti/p/sup +/Si interfaces are investigated by means of CRs of various dimensions, and a single value of contact resistivity is extracted for each interface.<>
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