用直接模拟蒙特卡罗方法对溅射反应器进行建模

1992 International Technical Digest on Electron Devices Meeting Pub Date : 1900-01-01 DOI:10.1109/IEDM.1992.307337

A. Kersch, W. Morokoff, C. Werner, D. Restaino, B. Vollmer

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引用次数: 1

摘要

采用直接模拟蒙特卡罗方法，模拟了用于在小接触孔中沉积钛膜的最先进的溅射反应器中的粒子和能量分布。计算提供了有关反应器内粒子和温度分布、沉积速率分布和到达衬底的原子角分布的信息。计算结果与实验数据吻合较好。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Modeling of a sputter reactor using the direct simulation Monte Carlo method

The direct simulation Monte Carlo method is utilized to simulate the particle and energy distributions in a state of the art sputtering reactor used to deposit titanium films in small contact holes. The calculations provide information about particle and temperature distributions within the reactor, deposition rate profiles, and angular distributions of the atoms arriving at the substrate. The results agree quite well with experimental data.<>

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1992 International Technical Digest on Electron Devices Meeting

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