微凸点阻挡层厚度效应研究

H. Li, Norhanani Binte Jaafar, M. I. E. Sam, Kalyn Lim Tien Shee, Wong Lai Yin, Chui King Jien
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引用次数: 0

摘要

随着半导体的发展,越来越多不同的器件需要集成以实现更快、更多功能。微凸点是芯片与芯片、芯片与晶圆、芯片与衬底之间的重要连接。在本研究中,我们评估了微碰撞阻挡层Ti厚度(400Å, 1KÅ和2KÅ)对抗剪强度和碰撞链阻力的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Study of barrier layer thickness effect for the micro-bump
With the semiconductor development, more and more different devices need be integrated to achieve faster and more functionalities. Micro-bump is an important connection from chip to chip, chip to wafer and chip to substrate. We evaluated micro-bump barrier layer Ti thicknesses (400Å, 1KÅ and 2KÅ) effect on shear strength and bump chain resistance in this study.
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