VBIC95:一个改进的垂直，集成电路双极晶体管模型

Proceedings of Bipolar/Bicmos Circuits and Technology Meeting Pub Date : 1995-10-02 DOI:10.1109/BIPOL.1995.493891

C. McAndrew, J. Seitchik, D. Bowers, M. Dunn, M. Foisy, I. Getreu, M. McSwain, S. Moinian, J. Parker, P. van Wijnen, L. Wagner

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引用次数: 53

摘要

本文提出了由IC和CAD行业代表开发的垂直BJT模型，作为SPICE Gummel-Poon模型的替代品。VBIC95包括改进的早期效应(输出电导)，衬底电流，准饱和和过温行为的建模。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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VBIC95: An improved vertical, IC bipolar transistor model

This paper presents a vertical BJT model developed by IC and CAD industry representatives as a replacement for the SPICE Gummel-Poon model. VBIC95 includes improved modeling of the Early effect (output conductance), substrate current, quasi-saturation, and behavior over temperature.

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Proceedings of Bipolar/Bicmos Circuits and Technology Meeting

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