堆叠纳米片GAA晶体管的自热效应研究

2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) Pub Date : 2018-04-16 DOI:10.1109/VLSI-TSA.2018.8403821

Linlin Cai, Wangyong Chen, G. Du, Jinfeng Kang, Xing Zhang, Xiaoyan Liu

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引用次数: 10

摘要

研究了水平堆叠栅极全能(GAA)纳米片晶体管的自热特性，研究了考虑简单后端线(BEOL)的空间温度分布和热流密度分布。给出了相关器件几何形状和材料热导率的影响，为减轻器件设计中的自热效应(SHE)提供了指导。研究结果表明，在实现稳健的热管理和精确的可靠性预测方面，纳米级器件的自加热应得到高度重视。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Investigation of self-heating effect on stacked nanosheet GAA transistors

The self-heating behavior of horizontally stacked gate-all-around (GAA) nanosheet transistor is evaluated to investigate the spatial temperature profile and heat flux distribution considering the simple back-end-of line (BEOL). The impacts of related device geometry and material thermal conductivity are given to provide guidelines for mitigating self-heating effect (SHE) in device design. The results indicate that self-heating in nanoscale device should be attached great importance in achieving robust thermal management and precise reliability prediction.

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2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

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