T. Kim, R. Hill, C. Young, D. Veksler, L. Morassi, S. Oktybrshky, J. Oh, C. Kang, D. Kim, J. D. del Alamo, C. Hobbs, P. Kirsch, R. Jammy
{"title":"InAs量子阱MOSFET (Lg = 100 nm)具有创纪录的高gm, fT和fmax","authors":"T. Kim, R. Hill, C. Young, D. Veksler, L. Morassi, S. Oktybrshky, J. Oh, C. Kang, D. Kim, J. D. del Alamo, C. Hobbs, P. Kirsch, R. Jammy","doi":"10.1109/VLSIT.2012.6242520","DOIUrl":null,"url":null,"abstract":"This paper reports InAs quantum-well (QW) MOSFETs with record transconductance (g<sub>m,max</sub> = 1.73 mS/μm) and high-frequency performance (f<sub>T</sub> = 245 GHz and f<sub>max</sub> = 355 GHz) at L<sub>g</sub> = 100 nm. This record performance is achieved by using a low D<sub>it</sub> composite Al<sub>2</sub>O<sub>3</sub>/InP gate stack, optimized layer design and a high mobility InAs channel. This work is significant because it shows a possible III-V material pathway from In<sub>1-x</sub>Ga<sub>x</sub>As to InAs with similar processing and generalized characterization, including D<sub>it</sub>.","PeriodicalId":266298,"journal":{"name":"2012 Symposium on VLSI Technology (VLSIT)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"22","resultStr":"{\"title\":\"InAs quantum-well MOSFET (Lg = 100 nm) with record high gm, fT and fmax\",\"authors\":\"T. Kim, R. Hill, C. Young, D. Veksler, L. Morassi, S. Oktybrshky, J. Oh, C. Kang, D. Kim, J. D. del Alamo, C. Hobbs, P. Kirsch, R. Jammy\",\"doi\":\"10.1109/VLSIT.2012.6242520\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reports InAs quantum-well (QW) MOSFETs with record transconductance (g<sub>m,max</sub> = 1.73 mS/μm) and high-frequency performance (f<sub>T</sub> = 245 GHz and f<sub>max</sub> = 355 GHz) at L<sub>g</sub> = 100 nm. This record performance is achieved by using a low D<sub>it</sub> composite Al<sub>2</sub>O<sub>3</sub>/InP gate stack, optimized layer design and a high mobility InAs channel. This work is significant because it shows a possible III-V material pathway from In<sub>1-x</sub>Ga<sub>x</sub>As to InAs with similar processing and generalized characterization, including D<sub>it</sub>.\",\"PeriodicalId\":266298,\"journal\":{\"name\":\"2012 Symposium on VLSI Technology (VLSIT)\",\"volume\":\"51 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-06-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"22\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 Symposium on VLSI Technology (VLSIT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.2012.6242520\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 Symposium on VLSI Technology (VLSIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2012.6242520","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
InAs quantum-well MOSFET (Lg = 100 nm) with record high gm, fT and fmax
This paper reports InAs quantum-well (QW) MOSFETs with record transconductance (gm,max = 1.73 mS/μm) and high-frequency performance (fT = 245 GHz and fmax = 355 GHz) at Lg = 100 nm. This record performance is achieved by using a low Dit composite Al2O3/InP gate stack, optimized layer design and a high mobility InAs channel. This work is significant because it shows a possible III-V material pathway from In1-xGaxAs to InAs with similar processing and generalized characterization, including Dit.
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