皮秒超声研究Ti和TiN帽层下CoSi/sub - 2/的电学和力学性能

Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407) Pub Date : 2000-06-05 DOI:10.1109/IITC.2000.854318

R. Stoner, G. Tas, C. Morath, H. Maris, Lee Chen, H. Chuang, Chi-Tung Huang, Y. Hwang

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引用次数: 2

摘要

我们报告了使用商用皮秒超声系统进行的CoSi/sub 2/层的非接触测量。这些层是通过两步rtp工艺形成的，从标称为120 /spl的Aring/ Co样品开始，用150 /spl的Aring/ PVD TiN或100 /spl的Aring/ PVD Ti覆盖。研究了最终二硅化物层的厚度、粗糙度和电阻率随第一次退火温度的变化规律。结果表明，在较宽的首次退火温度范围内，tin包覆工艺产生的二硅化物膜比ti包覆工艺更光滑，导电性能更好。

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Picosecond ultrasonic study of the electrical and mechanical properties of CoSi/sub 2/ formed under Ti and TiN cap layers

We report noncontact measurements of CoSi/sub 2/ layers made using a commercial picosecond ultrasonic system. The layers were formed in a two step RTP-process beginning with samples with nominally 120 /spl Aring/ Co capped with either 150 /spl Aring/ PVD TiN, or 100 /spl Aring/ PVD Ti. The thickness, roughness and electrical resistivity of the final disilicide layers were investigated as functions of the first anneal temperature. The results indicate that the TiN-capped process yields a significantly smoother and more conductive disilicide film than the Ti-capped process over a wide range of first anneal temperatures.

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Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)

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