Wei Wang, Yuan Dong, S. Lee, W. Loke, X. Gong, S. Yoon, G. Liang, Y. Yeo
{"title":"锗锡异质结光电晶体管:迈向短波红外高效低功耗光电探测","authors":"Wei Wang, Yuan Dong, S. Lee, W. Loke, X. Gong, S. Yoon, G. Liang, Y. Yeo","doi":"10.1109/VLSIT.2016.7573449","DOIUrl":null,"url":null,"abstract":"We report the world's first demonstration of Germanium-Tin (Ge1-xSnx) heterojunction phototransistor (HPT) for high-efficient low-power light detection in short-wave infrared (SWIR) range. Large optical response enhancement of ~10 times over the conventional p-i-n Ge1-xSnx photodiode (PD) was achieved, with photodetection beyond 2003 nm. High responsivities of ~2.6 A/W at 1510 nm and ~0.19 A/W at 1877 nm were achieved at a low operating bias of 1.0 V.","PeriodicalId":129300,"journal":{"name":"2016 IEEE Symposium on VLSI Technology","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Germanium-Tin heterojunction phototransistor: Towards high-efficiency low-power photodetection in short-wave infrared range\",\"authors\":\"Wei Wang, Yuan Dong, S. Lee, W. Loke, X. Gong, S. Yoon, G. Liang, Y. Yeo\",\"doi\":\"10.1109/VLSIT.2016.7573449\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report the world's first demonstration of Germanium-Tin (Ge1-xSnx) heterojunction phototransistor (HPT) for high-efficient low-power light detection in short-wave infrared (SWIR) range. Large optical response enhancement of ~10 times over the conventional p-i-n Ge1-xSnx photodiode (PD) was achieved, with photodetection beyond 2003 nm. High responsivities of ~2.6 A/W at 1510 nm and ~0.19 A/W at 1877 nm were achieved at a low operating bias of 1.0 V.\",\"PeriodicalId\":129300,\"journal\":{\"name\":\"2016 IEEE Symposium on VLSI Technology\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-06-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE Symposium on VLSI Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.2016.7573449\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2016.7573449","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Germanium-Tin heterojunction phototransistor: Towards high-efficiency low-power photodetection in short-wave infrared range
We report the world's first demonstration of Germanium-Tin (Ge1-xSnx) heterojunction phototransistor (HPT) for high-efficient low-power light detection in short-wave infrared (SWIR) range. Large optical response enhancement of ~10 times over the conventional p-i-n Ge1-xSnx photodiode (PD) was achieved, with photodetection beyond 2003 nm. High responsivities of ~2.6 A/W at 1510 nm and ~0.19 A/W at 1877 nm were achieved at a low operating bias of 1.0 V.
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