基于有限元模拟方法的深沟槽终端二极管电特性演化

2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) Pub Date : 2014-04-07 DOI:10.1109/EUROSIME.2014.6813814

F. Baccar, F. Le Henaff, L. Théolier, S. Azzopardi, E. Woirgard

{"title":"基于有限元模拟方法的深沟槽终端二极管电特性演化","authors":"F. Baccar, F. Le Henaff, L. Théolier, S. Azzopardi, E. Woirgard","doi":"10.1109/EUROSIME.2014.6813814","DOIUrl":null,"url":null,"abstract":"The main contribution of this work consists in showing the possibility to use the Cyclotene 4026-46 BCB (BenzoCycloButen) resin in thick layer to realize Deep Trench Termination (DT2). The development of the DT2 in power devices strongly depends on its reliability. 2D finite elements simulations were used to determinate the electrical characteristics after mechanical stresses created in the structure. It appears that void created inside the structure does not affect the structure's characteristic; however it changes when a quantity of charge was added at interface Silicon/BCB.","PeriodicalId":359430,"journal":{"name":"2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Electrical characteristics evolution of the Deep Trench Termination diode based on a finite elements simulation approach\",\"authors\":\"F. Baccar, F. Le Henaff, L. Théolier, S. Azzopardi, E. Woirgard\",\"doi\":\"10.1109/EUROSIME.2014.6813814\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The main contribution of this work consists in showing the possibility to use the Cyclotene 4026-46 BCB (BenzoCycloButen) resin in thick layer to realize Deep Trench Termination (DT2). The development of the DT2 in power devices strongly depends on its reliability. 2D finite elements simulations were used to determinate the electrical characteristics after mechanical stresses created in the structure. It appears that void created inside the structure does not affect the structure's characteristic; however it changes when a quantity of charge was added at interface Silicon/BCB.\",\"PeriodicalId\":359430,\"journal\":{\"name\":\"2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)\",\"volume\":\"30 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-04-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EUROSIME.2014.6813814\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUROSIME.2014.6813814","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

本工作的主要贡献在于展示了在厚层中使用Cyclotene 4026-46 BCB (BenzoCycloButen)树脂实现Deep Trench Termination (DT2)的可能性。功率器件中DT2的发展在很大程度上取决于其可靠性。二维有限元模拟用于确定在结构中产生机械应力后的电气特性。由此可见，在结构内部产生的空洞并不影响结构的特性;然而，当在硅/BCB界面添加一定数量的电荷时，它会发生变化。

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Electrical characteristics evolution of the Deep Trench Termination diode based on a finite elements simulation approach

The main contribution of this work consists in showing the possibility to use the Cyclotene 4026-46 BCB (BenzoCycloButen) resin in thick layer to realize Deep Trench Termination (DT2). The development of the DT2 in power devices strongly depends on its reliability. 2D finite elements simulations were used to determinate the electrical characteristics after mechanical stresses created in the structure. It appears that void created inside the structure does not affect the structure's characteristic; however it changes when a quantity of charge was added at interface Silicon/BCB.

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2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)

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