电气测试信息的局限性:以多晶硅发射极触点为例

ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures Pub Date : 1993-03-22 DOI:10.1109/ICMTS.1993.292913

M. Johnson, A. Strojwas, D. Greve, R. Reuss, A. Flowers

{"title":"电气测试信息的局限性:以多晶硅发射极触点为例","authors":"M. Johnson, A. Strojwas, D. Greve, R. Reuss, A. Flowers","doi":"10.1109/ICMTS.1993.292913","DOIUrl":null,"url":null,"abstract":"It is shown in two case studies on polysilicon emitter contacts that electrical measurements are not sufficient on their own to understand observed variations in the devices under study. Combined with physical information from transmission electron microscopy (TEM) and secondary ion mass spectroscopy (SIMS) it is possible to see more clearly links between processing, structure, and electrical performance. Both interfacial oxide effects and emitter dose effects are discussed.<<ETX>>","PeriodicalId":123048,"journal":{"name":"ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Limitations of electrical test information: a case study with polysilicon emitter contacts\",\"authors\":\"M. Johnson, A. Strojwas, D. Greve, R. Reuss, A. Flowers\",\"doi\":\"10.1109/ICMTS.1993.292913\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"It is shown in two case studies on polysilicon emitter contacts that electrical measurements are not sufficient on their own to understand observed variations in the devices under study. Combined with physical information from transmission electron microscopy (TEM) and secondary ion mass spectroscopy (SIMS) it is possible to see more clearly links between processing, structure, and electrical performance. Both interfacial oxide effects and emitter dose effects are discussed.<<ETX>>\",\"PeriodicalId\":123048,\"journal\":{\"name\":\"ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-03-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMTS.1993.292913\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.1993.292913","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

在对多晶硅发射极接触的两个案例研究中表明，电测量本身不足以理解所研究器件中观察到的变化。结合透射电子显微镜(TEM)和次级离子质谱(SIMS)的物理信息，可以更清楚地看到加工、结构和电气性能之间的联系。讨论了界面氧化效应和辐射源剂量效应。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Limitations of electrical test information: a case study with polysilicon emitter contacts

It is shown in two case studies on polysilicon emitter contacts that electrical measurements are not sufficient on their own to understand observed variations in the devices under study. Combined with physical information from transmission electron microscopy (TEM) and secondary ion mass spectroscopy (SIMS) it is possible to see more clearly links between processing, structure, and electrical performance. Both interfacial oxide effects and emitter dose effects are discussed.<>

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures

自引率

0.00%

发文量