{"title":"高栅极电压下pmosfet的热载流子诱导退化","authors":"J.F. Chen, C. Tsao, T. Ong","doi":"10.1109/UGIM.2003.1225732","DOIUrl":null,"url":null,"abstract":"Enhanced hot-carrier induced drain current degradation under high gate voltage stress is observed in pMOSFETs. Electron tunneling from the gate plus Auger recombination assisted hot-hole energy gain process is responsible for this phenomenon. This enhancement in drain current degradation is more severe for devices with thinner gate oxide, or devices operated under higher temperature or lower drain voltage.","PeriodicalId":356452,"journal":{"name":"Proceedings of the 15th Biennial University/Government/ Industry Microelectronics Symposium (Cat. No.03CH37488)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Enhanced hot-carrier induced degradation in pMOSFETs stressed under high gate voltage\",\"authors\":\"J.F. Chen, C. Tsao, T. Ong\",\"doi\":\"10.1109/UGIM.2003.1225732\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Enhanced hot-carrier induced drain current degradation under high gate voltage stress is observed in pMOSFETs. Electron tunneling from the gate plus Auger recombination assisted hot-hole energy gain process is responsible for this phenomenon. This enhancement in drain current degradation is more severe for devices with thinner gate oxide, or devices operated under higher temperature or lower drain voltage.\",\"PeriodicalId\":356452,\"journal\":{\"name\":\"Proceedings of the 15th Biennial University/Government/ Industry Microelectronics Symposium (Cat. No.03CH37488)\",\"volume\":\"40 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-09-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 15th Biennial University/Government/ Industry Microelectronics Symposium (Cat. No.03CH37488)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/UGIM.2003.1225732\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 15th Biennial University/Government/ Industry Microelectronics Symposium (Cat. No.03CH37488)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/UGIM.2003.1225732","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Enhanced hot-carrier induced degradation in pMOSFETs stressed under high gate voltage
Enhanced hot-carrier induced drain current degradation under high gate voltage stress is observed in pMOSFETs. Electron tunneling from the gate plus Auger recombination assisted hot-hole energy gain process is responsible for this phenomenon. This enhancement in drain current degradation is more severe for devices with thinner gate oxide, or devices operated under higher temperature or lower drain voltage.