利用硅锗技术对巨磁阻(GMR)记录磁头进行静电放电保护

2004 Electrical Overstress/Electrostatic Discharge Symposium Pub Date : 2004-09-01 DOI:10.1109/EOSESD.2004.5272583

S. Voldman, S. Luo, C. Nomura, K. Vannorsdel, N. Feilchenfeld

{"title":"利用硅锗技术对巨磁阻(GMR)记录磁头进行静电放电保护","authors":"S. Voldman, S. Luo, C. Nomura, K. Vannorsdel, N. Feilchenfeld","doi":"10.1109/EOSESD.2004.5272583","DOIUrl":null,"url":null,"abstract":"Experimental studies on the ESD protection were completed on advanced magnetic recording giant magneto-resistive heads using a BiCMOS silicon germanium technology for the first time. SiGe-based active and passive elements, such as isolated MOSFETs, varactors and Schottky diodes were used to evaluate the influence of turn-on voltage on the protection levels.","PeriodicalId":302866,"journal":{"name":"2004 Electrical Overstress/Electrostatic Discharge Symposium","volume":"42 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"Electrostatic discharge (ESD) protection of giant magneto-resistive (GMR) recording heads with a silicon germanium technology\",\"authors\":\"S. Voldman, S. Luo, C. Nomura, K. Vannorsdel, N. Feilchenfeld\",\"doi\":\"10.1109/EOSESD.2004.5272583\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Experimental studies on the ESD protection were completed on advanced magnetic recording giant magneto-resistive heads using a BiCMOS silicon germanium technology for the first time. SiGe-based active and passive elements, such as isolated MOSFETs, varactors and Schottky diodes were used to evaluate the influence of turn-on voltage on the protection levels.\",\"PeriodicalId\":302866,\"journal\":{\"name\":\"2004 Electrical Overstress/Electrostatic Discharge Symposium\",\"volume\":\"42 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2004 Electrical Overstress/Electrostatic Discharge Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EOSESD.2004.5272583\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 Electrical Overstress/Electrostatic Discharge Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EOSESD.2004.5272583","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 11

摘要

首次利用BiCMOS硅锗技术完成了先进磁记录巨磁阻磁头的ESD保护实验研究。基于sigg的有源和无源元件，如隔离mosfet、变容管和肖特基二极管，被用来评估导通电压对保护水平的影响。

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Electrostatic discharge (ESD) protection of giant magneto-resistive (GMR) recording heads with a silicon germanium technology

Experimental studies on the ESD protection were completed on advanced magnetic recording giant magneto-resistive heads using a BiCMOS silicon germanium technology for the first time. SiGe-based active and passive elements, such as isolated MOSFETs, varactors and Schottky diodes were used to evaluate the influence of turn-on voltage on the protection levels.

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2004 Electrical Overstress/Electrostatic Discharge Symposium

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