{"title":"先进设备仿真的传输模型——真相还是后果?","authors":"S. Laux, M. Fischetti","doi":"10.1109/BIPOL.1995.493859","DOIUrl":null,"url":null,"abstract":"An overview of three methods currently employed in advanced semiconductor device simulation is given, together with results for a model n/sup +/-n-n/sup +/ structure. The Monte Carlo, energy transport and spherical harmonic expansion methods are discussed from the perspective of a Monte Carlo enthusiast.","PeriodicalId":230944,"journal":{"name":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":"{\"title\":\"Transport models for advanced device simulation-truth or consequences?\",\"authors\":\"S. Laux, M. Fischetti\",\"doi\":\"10.1109/BIPOL.1995.493859\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An overview of three methods currently employed in advanced semiconductor device simulation is given, together with results for a model n/sup +/-n-n/sup +/ structure. The Monte Carlo, energy transport and spherical harmonic expansion methods are discussed from the perspective of a Monte Carlo enthusiast.\",\"PeriodicalId\":230944,\"journal\":{\"name\":\"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-10-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"15\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.1995.493859\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1995.493859","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Transport models for advanced device simulation-truth or consequences?
An overview of three methods currently employed in advanced semiconductor device simulation is given, together with results for a model n/sup +/-n-n/sup +/ structure. The Monte Carlo, energy transport and spherical harmonic expansion methods are discussed from the perspective of a Monte Carlo enthusiast.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
