进一步表征裸铜丝和镀钯铜丝在不同引线框架电镀方案下的第二键

Loh Lee Jeng, Loh Kian Hwa, Ng Wen Chang
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引用次数: 1

摘要

在高温储存下,金和铜球键合中的金属间生长缺陷和/或球键(第一键)的腐蚀缺陷会导致线键的退化。等温时效过程的评价也主要集中在Au-Al或Cu-Al的金属间生长。一般来说,目前还没有关于金丝键合的第二键的可靠性问题,但对于铜丝键合的第二键,迄今为止还没有充分的研究。据报道,在铜线焊接中,高温储存后与第二次焊接有关的新失效机制(即楔形提升)。本文讨论了裸镀铜和镀钯铜线在焊接和高温储存后的一些特性。研究了等温老化过程中不同焊丝类型和引线框镀方案对二次键失效的影响,并对其降解机理进行了探讨。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Further characterization of 2nd bond in bare Cu wire and Pd coated Cu wire on various leadframe plating scheme
Degradation of wire bonds in gold and copper ball bonding at high temperature storage normally associated with intermetallic growth defects and/or corrosion defects for the ball bonds (1st bond). Assessments during isothermal aging also mainly focus on intermetallic growth of Au-Al or Cu-Al. In general there is no reliability concern of 2nd bond for gold wire bonding thus far but for 2nd bond of Cu wire bonding there has not been studied sufficiently to date. New failure mechanism (i.e. lifted wedge) that is associated with second bond after high temperature storage had been reported in copper wire bonding. This paper discussed some characteristic of bare Cu and Pd coated Cu wire as bonded and also after high temperature storage. The effect of different wire type and leadframe plating scheme of 2nd bond failures during isothermal aging has been assessed and the mechanism of degradation is discussed.
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