晶圆互连的电学特性

2004 IEEE Workshop on Microelectronics and Electron Devices Pub Date : 2004-09-27 DOI:10.1109/WMED.2004.1297363

T. E. Lawrence, S. M. Donovan, William B. Knowlton, J. Rush-Byers, Amy J. Moll

{"title":"晶圆互连的电学特性","authors":"T. E. Lawrence, S. M. Donovan, William B. Knowlton, J. Rush-Byers, Amy J. Moll","doi":"10.1109/WMED.2004.1297363","DOIUrl":null,"url":null,"abstract":"Through-wafer interconnects (TWI) allows 3-D chip stacking enabling integration of multiple chip functions (i.e. opto-electronic, analog or digital) with reduced power and space requirements. To date, non-destructive characterization techniques for determining interconnect integrity and reliability have not been developed. This work examines a specially modified electrical four-point probe for non-destructive characterization of TWI's. Technical challenges and measurement optimization methods are reported.","PeriodicalId":296968,"journal":{"name":"2004 IEEE Workshop on Microelectronics and Electron Devices","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"Electrical characterization of through-wafer interconnects\",\"authors\":\"T. E. Lawrence, S. M. Donovan, William B. Knowlton, J. Rush-Byers, Amy J. Moll\",\"doi\":\"10.1109/WMED.2004.1297363\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Through-wafer interconnects (TWI) allows 3-D chip stacking enabling integration of multiple chip functions (i.e. opto-electronic, analog or digital) with reduced power and space requirements. To date, non-destructive characterization techniques for determining interconnect integrity and reliability have not been developed. This work examines a specially modified electrical four-point probe for non-destructive characterization of TWI's. Technical challenges and measurement optimization methods are reported.\",\"PeriodicalId\":296968,\"journal\":{\"name\":\"2004 IEEE Workshop on Microelectronics and Electron Devices\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-09-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2004 IEEE Workshop on Microelectronics and Electron Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WMED.2004.1297363\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 IEEE Workshop on Microelectronics and Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WMED.2004.1297363","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 10

摘要

通过晶圆互连(TWI)允许3-D芯片堆叠，从而实现多种芯片功能(即光电，模拟或数字)的集成，同时降低功耗和空间要求。迄今为止，用于确定互连完整性和可靠性的无损表征技术尚未发展起来。这项工作研究了一种特殊改良的电四点探头，用于TWI的无损表征。报告了技术挑战和测量优化方法。

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Electrical characterization of through-wafer interconnects

Through-wafer interconnects (TWI) allows 3-D chip stacking enabling integration of multiple chip functions (i.e. opto-electronic, analog or digital) with reduced power and space requirements. To date, non-destructive characterization techniques for determining interconnect integrity and reliability have not been developed. This work examines a specially modified electrical four-point probe for non-destructive characterization of TWI's. Technical challenges and measurement optimization methods are reported.

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来源期刊

2004 IEEE Workshop on Microelectronics and Electron Devices

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