横向电荷迁移对平面和三维SONOS器件保留性能的影响

2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC) Pub Date : 2011-10-13 DOI:10.1109/ESSDERC.2011.6044201

A. Maconi, A. Arreghini, C. M. Compagnoni, G. Van den bosch, A. Spinelli, J. van Houdt, A. Lacaita

{"title":"横向电荷迁移对平面和三维SONOS器件保留性能的影响","authors":"A. Maconi, A. Arreghini, C. M. Compagnoni, G. Van den bosch, A. Spinelli, J. van Houdt, A. Lacaita","doi":"10.1109/ESSDERC.2011.6044201","DOIUrl":null,"url":null,"abstract":"This paper investigates the impact of lateral charge migration on the retention performance of charge-trap memories whose storage layer is not patterned self-aligned with the channel area of each cell. Experimental results on planar SONOS devices, revealing an important contribution of lateral charge migration at 150 °C, are used to calibrate a new numerical model accounting for both the vertical and the lateral charge loss from the silicon nitride. Modeling results allow a detailed analysis of the retention transients of both planar and 3D SONOS arrays, evaluating, for the latter, the minimum dimensions needed to fulfill the retention requirements at 85 °C.","PeriodicalId":161896,"journal":{"name":"2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"20","resultStr":"{\"title\":\"Impact of lateral charge migration on the retention performance of planar and 3D SONOS devices\",\"authors\":\"A. Maconi, A. Arreghini, C. M. Compagnoni, G. Van den bosch, A. Spinelli, J. van Houdt, A. Lacaita\",\"doi\":\"10.1109/ESSDERC.2011.6044201\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper investigates the impact of lateral charge migration on the retention performance of charge-trap memories whose storage layer is not patterned self-aligned with the channel area of each cell. Experimental results on planar SONOS devices, revealing an important contribution of lateral charge migration at 150 °C, are used to calibrate a new numerical model accounting for both the vertical and the lateral charge loss from the silicon nitride. Modeling results allow a detailed analysis of the retention transients of both planar and 3D SONOS arrays, evaluating, for the latter, the minimum dimensions needed to fulfill the retention requirements at 85 °C.\",\"PeriodicalId\":161896,\"journal\":{\"name\":\"2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)\",\"volume\":\"59 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-10-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"20\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.2011.6044201\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2011.6044201","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 20

摘要

本文研究了横向电荷迁移对存储层不与每个细胞的通道面积自对齐的电荷阱存储器的保留性能的影响。在平面SONOS器件上的实验结果揭示了150°C下侧向电荷迁移的重要贡献，并用于校准一个新的计算氮化硅垂直和侧向电荷损失的数值模型。建模结果允许对平面和3D SONOS阵列的保留瞬态进行详细分析，评估后者在85°C下满足保留要求所需的最小尺寸。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Impact of lateral charge migration on the retention performance of planar and 3D SONOS devices

This paper investigates the impact of lateral charge migration on the retention performance of charge-trap memories whose storage layer is not patterned self-aligned with the channel area of each cell. Experimental results on planar SONOS devices, revealing an important contribution of lateral charge migration at 150 °C, are used to calibrate a new numerical model accounting for both the vertical and the lateral charge loss from the silicon nitride. Modeling results allow a detailed analysis of the retention transients of both planar and 3D SONOS arrays, evaluating, for the latter, the minimum dimensions needed to fulfill the retention requirements at 85 °C.

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2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)

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