HfO2/TaN/TiN栅极堆击穿后电流的解析模型

2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2007-07-11 DOI:10.1109/IPFA.2007.4378104

E. Miranda, K. Pey, R. Ranjan, C. Tung

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引用次数: 1

摘要

我们研究了高k/金属栅极mosfet与Si衬底在耗尽和积累条件下的后bd电流。实验结果似乎指出，靠近BD点入口的衬底区域的电子性质在描述这一现象中起着核心作用。我们还根据归一化微分电导检查了后bd电流的行为。给出了近似解析表达式。

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Analytic model for the post-breakdown current in HfO2/TaN/TiN gate stacks

We have examined the post-BD currents in high-k/metal gate MOSFETs with the Si substrate under depletion and accumulation conditions. The experimental results seem to point out that the electronic properties of the substrate region close to the entrance of the BD spot play a central role in the description of the phenomenon. We have also examined the behavior of the post-BD current in terms of the normalized differential conductance. An approximated analytic expression has been provided.

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2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits

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