{"title":"扩展椭圆偏振光谱法识别Si/SiO2/高k/金属栅堆中的电活性缺陷","authors":"J. Price, G. Bersuker, P. Lysaght, H. Tseng","doi":"10.1109/VTSA.2009.5159291","DOIUrl":null,"url":null,"abstract":"This paper presents a new method utilizing spectroscopic ellipsometry (SE) to non-invasively identify the oxygen vacancy defects located in the bottom interfacial SiO2 layer (BIF) of the scaled high-k/ metal gate stacks. Discrete absorption features within the bandgap of the SiO2 BIF are identified, and their relation to both intrinsic and process-induced defects is proposed. Sensitivity to changes in these defects with different process conditions is demonstrated, along with evidence suggesting that these same defects may contribute to the mechanism associated with the Vfb roll-off phenomenon.","PeriodicalId":309622,"journal":{"name":"2009 International Symposium on VLSI Technology, Systems, and Applications","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Extending spectroscopic ellipsometry for identification of electrically active defects in Si/SiO2/high-k/metal gate stacks\",\"authors\":\"J. Price, G. Bersuker, P. Lysaght, H. Tseng\",\"doi\":\"10.1109/VTSA.2009.5159291\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a new method utilizing spectroscopic ellipsometry (SE) to non-invasively identify the oxygen vacancy defects located in the bottom interfacial SiO2 layer (BIF) of the scaled high-k/ metal gate stacks. Discrete absorption features within the bandgap of the SiO2 BIF are identified, and their relation to both intrinsic and process-induced defects is proposed. Sensitivity to changes in these defects with different process conditions is demonstrated, along with evidence suggesting that these same defects may contribute to the mechanism associated with the Vfb roll-off phenomenon.\",\"PeriodicalId\":309622,\"journal\":{\"name\":\"2009 International Symposium on VLSI Technology, Systems, and Applications\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-04-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 International Symposium on VLSI Technology, Systems, and Applications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VTSA.2009.5159291\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 International Symposium on VLSI Technology, Systems, and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VTSA.2009.5159291","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Extending spectroscopic ellipsometry for identification of electrically active defects in Si/SiO2/high-k/metal gate stacks
This paper presents a new method utilizing spectroscopic ellipsometry (SE) to non-invasively identify the oxygen vacancy defects located in the bottom interfacial SiO2 layer (BIF) of the scaled high-k/ metal gate stacks. Discrete absorption features within the bandgap of the SiO2 BIF are identified, and their relation to both intrinsic and process-induced defects is proposed. Sensitivity to changes in these defects with different process conditions is demonstrated, along with evidence suggesting that these same defects may contribute to the mechanism associated with the Vfb roll-off phenomenon.