无引线封装体与界面复合断裂的数值-实验分析

S. Noijen, S. Walczyk, Roelf Groenhuis, O. van der Sluis
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引用次数: 0

摘要

在20世纪60年代,表面安装技术得到了发展。这种技术作为通孔技术的替代方案,可以通过焊接更容易地将组件放置在电路板的两侧,减小封装尺寸,简化组装并降低成本。此外,还获得了较高的机械鲁棒性。在本文中,根据EN 60068-2-21:1999测试u1“终端和整体安装设备的稳健性:基底弯曲测试”,进行了数值实验研究,以调查两个表面安装设备(smd)的稳健性。通过实验确定了相应的失效模式、焊盘间的本体裂纹以及引线框/塑性界面的分层。通过数值分析来解释发生的故障以及所研究的两种smd之间的差异。首先,直接的应力分析使我们能够了解塑性体的应力分布。由于这种分析不能解释发生的分层现象,因此采用内聚区模型对引线框/电磁兼容接口的分层敏感性进行了研究。这些结果提供了对失效机制的深入了解,但不能解释两种smd之间的差异。因此,进行了结合体裂和界面裂的第三次数值分析。这一分析能够解释失效机制和两种SMD封装之间的差异。这项工作表明,对于这个具体的例子,需要更先进的数值分析来解释半导体封装的实际失效行为。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Numerical-experimental analysis of combined bulk and interface fracture in a leadless package
In the 1960's surface mounted technology was developed. This technology as an alternative for through-hole technology made it easier to place components on both sides of the board by soldering, decreased package sizes, simplified assembly and reduced costs. Furthermore, higher mechanical robustness was obtained. In this paper, a numerical-experimental study is performed to investigate the robustness of two surface mounted devices (SMDs) under EN 60068-2-21:1999 Test Ue1 ‘Robustness of Terminations and Integral Mounting Devices: Substrate Bending Test’ as described in [1]. The relevant failure modes, body cracks between the pads and delamination of the leadframe/plastic interface is identified by experiments. Numerical analysis is carried out to explain the occurring failure and to explain differences between the two SMDs under investigation. First, straight-forward stress analysis gives insight in the stress distribution of the plastic body. As this analysis cannot explain the occurring delamination cohesive zone modeling is used to investigate the delamination sensitivity of the leadframe/EMC interfaces. These results give insight in the failure mechanism but do not explain the differences between the two SMDs. Therefore, a third numerical analysis with combined bulk and interface fracture is performed. This analysis is capable to explain the failure mechanism and the differences between the two SMD packages. This work shows that for this specific example more advanced numerical analysis is needed to explain the actual failure behavior of semiconductor packages.
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