用中子反射法分析键合SiCN界面

2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2021-10-05 DOI:10.1109/LTB-3D53950.2021.9598423

M. Fujino, Kenji Takahashi, K. Kikuchi, Tetsuya Ueda, N. Miyata, T. Miyazaki

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引用次数: 0

摘要

利用中子反射法(NR)研究了直接键合SiCN衬底的界面结构特性。NR结果表明，由于水渗透到未退火的键合界面，直接键合的SiCN需要在键合后立即进行退火处理。

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Interfacial Analysis of Bonded SiCN Interfaces by Neutron Reflectometry

We investigated the interface structural properties of direct bonded SiCN substrate using neutron reflectometry (NR). NR results suggest that direct bonded SiCN requires annealing process immediately after bonding process, because of water penetration into non-annealed bonded interface.

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2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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