改进的室温多砷化镓薄板键合工艺以开发波长转换器件

2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2021-10-05 DOI:10.1109/LTB-3D53950.2021.9598399

Yuki Takahashi, Chokutaro Kawai, I. Shoji

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引用次数: 0

摘要

改进的制备工艺使我们能够降低多个砷化镓薄板的准相位匹配(QPM)堆叠的内部散射损失。这是通过在具有激光级平面的YAG晶体上设置GaAs板来完成的。所制备的25片堆叠GaAs QPM器件的每个界面(1.5 μm处)损耗为1.8%，比用先前工艺制备的11片堆叠器件的损耗小70%。

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Improved Process for Room-temperature Bonding Multiple GaAs Thin Plates to Develop Wavelength-conversion Devices

Improved fabrication process enables us to reduce the internal scattering loss of a quasi-phase-matching (QPM) stack of multiple GaAs thin plates. This is accomplished by setting GaAs plates on YAG crystals with laser-grade flat surfaces. The loss per interface (at 1.5 μm) of the fabricated 25-plate stacked GaAs QPM device is 1.8 %, which is 70 % smaller than the 11-plate stack fabricated with the previous process.

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2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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