体GaN中的垂直功率二极管

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) Pub Date : 2013-05-26 DOI:10.1109/ISPSD.2013.6694455

D. Disney, H. Nie, A. Edwards, D. Bour, H. Shah, I. Kizilyalli

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引用次数: 52

摘要

垂直二极管击穿电压高达2.6kV已经制造在大块氮化镓衬底。这些器件的测量值显示其性能接近氮化镓的理论极限。这些垂直GaN二极管表现出强大的雪崩击穿行为，具有正温度系数。系统级性能优势已在功率转换应用中得到证明。从数千台设备中收集了统计数据。初步可靠性测试已经完成。

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Vertical power diodes in bulk GaN

Vertical diodes with breakdown voltages up to 2.6kV have been fabricated on bulk GaN substrates. The measured figures-of-merit of these devices show performance near the theoretical limit of GaN. These vertical GaN diodes exhibit robust avalanche breakdown behavior with a positive temperature coefficient. System-level performance advantages have been demonstrated in power conversion applications. Statistical data have been collected from thousands of devices. Initial reliability tests have been completed.

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2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)

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