用于逻辑应用的合并互补BiCMOS

S. Ogura, N. Rovedo, J. Acocella, A. Dally, T. Yanagisawa, J. Burkhardt, T. Buti, C. Richwine, F. Montegari, K. Barnes, C. Ng, E. Valsamakis, C. Codella
{"title":"用于逻辑应用的合并互补BiCMOS","authors":"S. Ogura, N. Rovedo, J. Acocella, A. Dally, T. Yanagisawa, J. Burkhardt, T. Buti, C. Richwine, F. Montegari, K. Barnes, C. Ng, E. Valsamakis, C. Codella","doi":"10.1109/VLSIT.1990.111018","DOIUrl":null,"url":null,"abstract":"The deficiencies of BiCMOS logic are analyzed, and the addition of a high-performance vertical pnp to the BiCMOS technology, henceforth called complementary BiCMOS technology, is considered as a solution. It is suggested that density problems associated with BiCMOS logic can be alleviated by replacing the conventional BiCMOS logic circuit, i.e. the `totem-pole' circuit, with a simpler complementary emitter follower circuit. This circuit allows the use of a merged bipolar-FET device structure as well as a common subcollector for the pnp, which further increases density. Another benefit of the common subcollector is that it reduces the process complexity associated with the addition of the vertical pnp. High performance is demonstrated with results from a test circuit with delays of 250 pS with 0.3 pF loading","PeriodicalId":441541,"journal":{"name":"Digest of Technical Papers.1990 Symposium on VLSI Technology","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"Merged complementary BiCMOS for logic applications\",\"authors\":\"S. Ogura, N. Rovedo, J. Acocella, A. Dally, T. Yanagisawa, J. Burkhardt, T. Buti, C. Richwine, F. Montegari, K. Barnes, C. Ng, E. Valsamakis, C. Codella\",\"doi\":\"10.1109/VLSIT.1990.111018\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The deficiencies of BiCMOS logic are analyzed, and the addition of a high-performance vertical pnp to the BiCMOS technology, henceforth called complementary BiCMOS technology, is considered as a solution. It is suggested that density problems associated with BiCMOS logic can be alleviated by replacing the conventional BiCMOS logic circuit, i.e. the `totem-pole' circuit, with a simpler complementary emitter follower circuit. This circuit allows the use of a merged bipolar-FET device structure as well as a common subcollector for the pnp, which further increases density. Another benefit of the common subcollector is that it reduces the process complexity associated with the addition of the vertical pnp. High performance is demonstrated with results from a test circuit with delays of 250 pS with 0.3 pF loading\",\"PeriodicalId\":441541,\"journal\":{\"name\":\"Digest of Technical Papers.1990 Symposium on VLSI Technology\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-06-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Digest of Technical Papers.1990 Symposium on VLSI Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.1990.111018\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Technical Papers.1990 Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.1990.111018","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11

摘要

分析了BiCMOS逻辑的不足,并认为在BiCMOS技术中增加高性能垂直pnp(以下称为互补BiCMOS技术)是一种解决方案。建议用更简单的互补发射极跟随器电路取代传统的BiCMOS逻辑电路,即“图腾柱”电路,可以缓解与BiCMOS逻辑相关的密度问题。该电路允许使用合并的双极fet器件结构以及pnp的公共子集电极,这进一步增加了密度。公共子收集器的另一个好处是,它降低了与添加垂直pnp相关的流程复杂性。在0.3 pF负载下,延迟为250 pS的测试电路的结果证明了高性能
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Merged complementary BiCMOS for logic applications
The deficiencies of BiCMOS logic are analyzed, and the addition of a high-performance vertical pnp to the BiCMOS technology, henceforth called complementary BiCMOS technology, is considered as a solution. It is suggested that density problems associated with BiCMOS logic can be alleviated by replacing the conventional BiCMOS logic circuit, i.e. the `totem-pole' circuit, with a simpler complementary emitter follower circuit. This circuit allows the use of a merged bipolar-FET device structure as well as a common subcollector for the pnp, which further increases density. Another benefit of the common subcollector is that it reduces the process complexity associated with the addition of the vertical pnp. High performance is demonstrated with results from a test circuit with delays of 250 pS with 0.3 pF loading
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