集成低k有机聚合物材料(k=2.3),降低电阻和电容

M. Hirai, Y. Akiyama, K. Koga, H. Kawakami, K. Nakatani, M. Tada
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引用次数: 0

摘要

我们展示了由住友胶木株式会社开发的非原生有机聚合物(k=2.3)的集成。针对有机材料开发的H2/He等离子体损伤恢复工艺在保持足够的TDDB可靠性的情况下,实现了5%的电容降低。机理是通过化学分析推测出来的。此外,即使没有屏障金属,TDDB的寿命也不会降低,这表明该聚合物可以降低其Cu扩散屏障性能的阻力。这种聚合物可以降低电阻和电容。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Integration of a low-k organic polymer material (k=2.3) for reducing both resistance and capacitance
We demonstrated an integration of a non-progen organic polymer (k=2.3) developed by Sumitomo Bakelite Co. Ltd. H2/He plasma damage recovery process which was developed for organic materials achieved 5% capacitance reduction with keeping enough TDDB reliability. The mechanism was presumed by chemical analysis. Moreover, the TDDB lifetime was not degraded even without a barrier metal, indicating this polymer could enable resistance reduction for its Cu diffusion barrier performance. This polymer would reduce both resistance and capacitance.
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