一种60纳米GaN/SiC技术的d波段有源单极双掷开关

2020 IEEE 5th International Conference on Integrated Circuits and Microsystems (ICICM) Pub Date : 2020-10-23 DOI:10.1109/ICICM50929.2020.9292152

YiBai Zhang, Fei Yang

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引用次数: 0

摘要

提出了一种基于氮化镓和碳化硅(GaN/SiC)的毫米波工艺的有源单极双掷开关(SPDT)，工作在d波段(110-170 GHz)频率范围内。该开关的单支路由并联晶体管和共源晶体管的组合组成，在传输状态下实现了低的插入损耗，在隔离状态下实现了良好的隔离。单片微波集成电路(mmic) SPDT开关的仿真结果表明，在35 GHz的3db带宽下，插入损耗最小为0.64 dB。在3db带宽内，交换机隔离度高于19.7 dB。

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A D-Band Active Single Pole Double Throw Switch in 60-nm GaN/SiC Technology

This paper presents an active single pole double throw switch (SPDT), with Gallium Nitride on Silicon Carbide (GaN/SiC) millimeter wave process, working in the D-Band (110-170 GHz) frequency range. A single branch of the switch consists of the combination of a shunt transistor and a common-source transistor, achieving low insertion loss in the transmission state as well as good isolation in the isolation state. The simulation results of the monolithic microwave integrated circuits (MMICs) SPDT switch demonstrate a minimum insertion loss of 0.64 dB with 3 dB bandwidths of 35 GHz. Within the 3 dB bandwidth the isolation of the switch is higher than 19.7 dB.

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2020 IEEE 5th International Conference on Integrated Circuits and Microsystems (ICICM)

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