一种MOS晶体管电容特性测试芯片

R. Lorival, P. Nouet
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引用次数: 2

摘要

提出了一种用于MOS晶体管电容特性测试的芯片。它允许人们精确地测量晶体管的电容,并识别各种组件(即栅极源、栅极体和栅极漏极)。通过电容测量,就可以确定晶体管的有效尺寸(长度和宽度)以及栅极氧化物的厚度。由于测试结构能够测量非常小的电容,因此对最小尺寸晶体管进行了研究。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A test chip for MOS transistor capacitance characterization
We present test chip for the capacitive characterization of MOS transistors. It allows one to measure accurately capacitances of the transistor and to identify the various components (i.e. gate-source, gate-bulk and gate-drain). From capacitance measurements, it is then possible to determine effective dimensions of the transistor (length and width) as well as gate oxide thickness. As Test Structures enable the measurement of very small capacitances, minimum dimension transistors are studied.
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