基于SGOI衬底的100 nm栅极长度Pt-Germanosilicide肖特基S/D PMOSFET

2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2006-07-03 DOI:10.1109/IPFA.2006.251052

F. Gao, S. Balakumar, Li Rui, S.J. Lee, C. Tung, A. Du, T. Sudhiranjan, D. Kwong, W. Hwang, N. Balasubramanian, P. Lo, Chi Dong-zhi

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引用次数: 0

摘要

单晶SGOI衬底是通过在SOI衬底上多步氧化共溅射无定形SiGe膜获得的。随后，采用Pt-germanosilicide Schottky S/D和HfO 2/TaN栅极叠加与传统自对准顶栅极工艺集成的SGOI PMOSFET进行了演示。介绍了SGOI PMOSFET的优良性能

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100 nm Gate Length Pt-Germanosilicide Schottky S/D PMOSFET on SGOI substrate fabricated by novel condensation approach

Single-crystalline SGOI substrate is achieved by multi-step oxidation of co-sputtered amorphous SiGe film on SOI substrate. Subsequently, SGOI PMOSFET using Pt-germanosilicide Schottky S/D and HfO 2/TaN gate stack integrated with conventional self-aligned top gate process was demonstrated. Excellent performance of the SGOI PMOSFET is presented

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2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits

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