SEM半导体层萃取技术

18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2011-07-04 DOI:10.1109/IPFA.2011.5992731

Jin Won Koh, G. Hwang, M. Hyun, Jun-Mo Yang, Jeoung Woo Kim

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引用次数: 4

摘要

由于光学显微镜分辨率的限制，很难提取栅极尺寸小于180 nm的半导体器件层。在这项研究中，我们开发了样品制备方法和图像拼接工艺，用于扫描电镜的层提取。这一技术的发展使分析众多系统集成电路的层信息成为可能。

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Semiconductor layer extraction techniques by SEM

Because of a limitation of optical microscope resolution, it is difficult to extract layers of semiconductor devices with a gate size smaller than 180 nm. In this study, we have developed sample preparation methods and image stitching processes for layer extraction by an SEM. This technical development makes it possible to analyze layer information for numerous system ICs.

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18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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