正偏置温度应力诱导的p沟道多晶硅薄膜晶体管退化

18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2011-07-04 DOI:10.1109/IPFA.2011.5992774

Xiaowei Lu, Mingxiang Wang, M. Wong

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引用次数: 3

摘要

系统地研究了p沟道多晶硅薄膜晶体管(TFTs)中正偏置温度应力引起的退化。观察到两阶段降解行为。第一阶段的降解与通过Fowler-Nordheim (F-N)隧穿捕获电子和通过Poole-Frenkel (P-F)发射释放捕获电子有关。而第二阶段的降解是由于栅极氧化物中氢相关的正电荷产生。

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Positive bias temperature stress induced degradation in p-channel poly-Si thin-film transistors

Positive bias temperature stress induced degradation in p-channel poly-Si thin-film transistors (TFTs) was systematically investigated. Two-stage degradation behavior is observed. The first-stage degradation is related to electron trapping via Fowler-Nordheim (F-N) tunnelling and de-trapping through Poole-Frenkel (P-F) emission. While the second-stage degradation is attributed to hydrogen related positive charge creation in the gate oxide.

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18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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