用于倒装芯片应用的高导热底填料

Proceedings International Symposium on Advanced Packaging Materials Processes, Properties and Interfaces (IEEE Cat. No.01TH8562) Pub Date : 2001-03-11 DOI:10.1109/ISAOM.2001.916547

K. Suzuki, O. Suzuki, K. Muramatu, T. Yuda, K. Isobe, H. Maruyama, H. Fukuyama

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引用次数: 1

摘要

开发了高导热系数的下填料。下填料采用细粒度氮化铝填充，具有高导热性和良好的流动性。同时，本产品满足底填体的基本要求，如JEDEC三级预处理试验。本文介绍了一种利用氮化铝制备倒装芯片衬底材料的方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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High thermally conductive underfill for flip-chip applications

High thermal conductivity underfill has been developed. The underfill is filled with fine particle size aluminum nitride that provides the high thermal conductivity and good fluidity. Also, this product satisfies the basic requirements for underfill, such as the Level 3 JEDEC preconditioning test. This paper presents work in developing an approach to underfill material for flip-chip packaging using aluminum nitride.

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Proceedings International Symposium on Advanced Packaging Materials Processes, Properties and Interfaces (IEEE Cat. No.01TH8562)

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