用于亚四分之一微米CMOS技术的带有SiN保护环的浅沟槽隔离

1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216) Pub Date : 1998-06-09 DOI:10.1109/VLSIT.1998.689260

T. Ogura, T. Yamamoto, Y. Saito, Y. Hayashi, T. Mogami

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引用次数: 6

摘要

浅沟隔离技术是实现高速、高封装密度cmos - lsi的重要技术之一。为了提高反向窄通道效应和器件可靠性，提出并评价了一种新型的SiO/sub /上边缘sino保护环。采用SiN保护环结构的STI具有良好的隔离特性，并充分改善了反向窄通道效应。

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A shallow trench isolation with SiN guard-ring for sub-quarter micron CMOS technologies

Shallow trench isolation (STI) technology is important to realize high-speed and high-packing-density CMOS-LSIs. A new SiN guard-ring on the upper edge of filled SiO/sub 2/ for steep-sidewall STI is proposed and evaluated to improve the reverse narrow channel effect and device reliability. Good isolation characteristics and sufficient improvement of the reverse narrow channel effect are achieved for STI with SiN guard-ring structure.

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来源期刊

1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216)

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