{"title":"用电荷泵送和电容法精确测量界面阱的横向分布","authors":"H. Uchida, K. Fukuda, H. Tanaka, N. Hirashita","doi":"10.1109/IEDM.1995.497178","DOIUrl":null,"url":null,"abstract":"A new measurement method for lateral distribution of generated interface traps is proposed. This method consists of the charge pumping measurement and the gate-to-drain capacitance (C/sub gd/) measurement. The validity of the C/sub gd/ measurement is confirmed by two-dimensional device simulation. Experimental results using this method exhibit that the peak position of interface traps generated during hot carrier stress is nearer to the gate edge than that of maximum electric field. Moreover, the lateral distribution of generated interface traps is found to extend slightly when the generation rate is enhanced due to water in interdielectric films of n-channel MOSFET.","PeriodicalId":137564,"journal":{"name":"Proceedings of International Electron Devices Meeting","volume":"49 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Accurate measurements for lateral distribution of interface traps by charge pumping and capacitance methods\",\"authors\":\"H. Uchida, K. Fukuda, H. Tanaka, N. Hirashita\",\"doi\":\"10.1109/IEDM.1995.497178\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new measurement method for lateral distribution of generated interface traps is proposed. This method consists of the charge pumping measurement and the gate-to-drain capacitance (C/sub gd/) measurement. The validity of the C/sub gd/ measurement is confirmed by two-dimensional device simulation. Experimental results using this method exhibit that the peak position of interface traps generated during hot carrier stress is nearer to the gate edge than that of maximum electric field. Moreover, the lateral distribution of generated interface traps is found to extend slightly when the generation rate is enhanced due to water in interdielectric films of n-channel MOSFET.\",\"PeriodicalId\":137564,\"journal\":{\"name\":\"Proceedings of International Electron Devices Meeting\",\"volume\":\"49 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1995.497178\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1995.497178","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Accurate measurements for lateral distribution of interface traps by charge pumping and capacitance methods
A new measurement method for lateral distribution of generated interface traps is proposed. This method consists of the charge pumping measurement and the gate-to-drain capacitance (C/sub gd/) measurement. The validity of the C/sub gd/ measurement is confirmed by two-dimensional device simulation. Experimental results using this method exhibit that the peak position of interface traps generated during hot carrier stress is nearer to the gate edge than that of maximum electric field. Moreover, the lateral distribution of generated interface traps is found to extend slightly when the generation rate is enhanced due to water in interdielectric films of n-channel MOSFET.
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