薄膜SOI mosfet中阈值电压、亚阈值斜率和界面耦合的统一模型

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI:10.1109/SOI.1993.344559

A. Ionescu, S. Cristoloveanu, A. Rusu, A. Chovet, A. Hassein-bey

{"title":"薄膜SOI mosfet中阈值电压、亚阈值斜率和界面耦合的统一模型","authors":"A. Ionescu, S. Cristoloveanu, A. Rusu, A. Chovet, A. Hassein-bey","doi":"10.1109/SOI.1993.344559","DOIUrl":null,"url":null,"abstract":"Although powerful device simulators are being developed, analytical models are still essential for depicting the underlying physical mechanisms. Recently, attention was paid to a \"unified\" approach able to account for MOSFET continuous operation from weak to moderate and strong inversion. In this paper, we propose an original model which applies not only to bulk Si and partially depleted SOI MOSFET's, but also to ultrathin film SOI transistors.<<ETX>>","PeriodicalId":308249,"journal":{"name":"Proceedings of 1993 IEEE International SOI Conference","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"A unified model of threshold voltage, subthreshold slope and interface coupling in thin film SOI MOSFETs\",\"authors\":\"A. Ionescu, S. Cristoloveanu, A. Rusu, A. Chovet, A. Hassein-bey\",\"doi\":\"10.1109/SOI.1993.344559\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Although powerful device simulators are being developed, analytical models are still essential for depicting the underlying physical mechanisms. Recently, attention was paid to a \\\"unified\\\" approach able to account for MOSFET continuous operation from weak to moderate and strong inversion. In this paper, we propose an original model which applies not only to bulk Si and partially depleted SOI MOSFET's, but also to ultrathin film SOI transistors.<<ETX>>\",\"PeriodicalId\":308249,\"journal\":{\"name\":\"Proceedings of 1993 IEEE International SOI Conference\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-10-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1993 IEEE International SOI Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOI.1993.344559\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1993 IEEE International SOI Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1993.344559","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

虽然正在开发功能强大的设备模拟器，但分析模型对于描述潜在的物理机制仍然是必不可少的。最近，人们关注的是一种能够解释MOSFET从弱到中等和强反转连续工作的“统一”方法。在本文中，我们提出了一个原始模型，不仅适用于大块硅和部分耗尽SOI MOSFET，也适用于超薄膜SOI晶体管。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A unified model of threshold voltage, subthreshold slope and interface coupling in thin film SOI MOSFETs

Although powerful device simulators are being developed, analytical models are still essential for depicting the underlying physical mechanisms. Recently, attention was paid to a "unified" approach able to account for MOSFET continuous operation from weak to moderate and strong inversion. In this paper, we propose an original model which applies not only to bulk Si and partially depleted SOI MOSFET's, but also to ultrathin film SOI transistors.<>

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of 1993 IEEE International SOI Conference

自引率

0.00%

发文量